ON Semiconductor's Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective field stop 2 trench construction.  It also provides superior performance in demanding switching applications, offering both low-on-state voltage and minimal switching loss. The IGBT is well-suited for UPS and solar applications.  A soft and fast co-packaged, free-wheeling diode, with a low-forward voltage is incorporated into the device.