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IRFP4668PBF
IRFP4668PBF
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IRFP4668PBF

Mfr. #:
IRFP4668PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRFP4668PBF Datasheet
ECAD Model:

Availability

Stock:
Available
On Order:
1986
Enter Quantity:
Current price of IRFP4668PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Quantity
Unit Price
Ext. Price
1
$6.57
$6.57
10
$5.94
$59.40
25
$5.66
$141.50
100
$4.91
$491.00
250
$4.69
$1 172.50
500
$4.28
$2 140.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
130 A
Rds On - Drain-Source Resistance:
9.7 mOhms
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
161 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
520 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
20.7 mm
Length:
15.87 mm
Transistor Type:
1 N-Channel
Width:
5.31 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
150 S
Fall Time:
74 ns
Product Type:
MOSFET
Rise Time:
105 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
64 ns
Typical Turn-On Delay Time:
41 ns
Part # Aliases:
SP001572854
Unit Weight:
1.340411 oz
Tags
IRFP466, IRFP46, IRFP4, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 520 W
***ure Electronics
Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***p One Stop Japan
Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
MOSFET, 200V 130A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:200V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:520A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Part # Mfg. Description Stock Price
IRFP4668PBF
DISTI # V36:1790_13892373		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube46
  • 1:$3.6690
IRFP4668PBF
DISTI # V99:2348_13892373		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube22
  • 10000:$2.9190
  • 4000:$3.2430
  • 2000:$3.6040
  • 400:$3.6690
IRFP4668PBF
DISTI # IRFP4668PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 130A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		74403In Stock
  • 1000:$3.1659
  • 500:$3.6893
  • 100:$4.4744
  • 25:$4.8768
  • 1:$5.9900
IRFP4668PBF
DISTI # 23457958		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube2444
  • 4:$3.1559
IRFP4668PBF
DISTI # 30716601		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube46
  • 3:$3.6690
IRFP4668PBF
DISTI # 26198371		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube22
  • 3:$3.6690
IRFP4668PBF
DISTI # IRFP4668PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC (Alt: IRFP4668PBF)
RoHS: Compliant
Min Qty: 400		Asia - 1575
  • 400:$3.0074
  • 800:$2.8838
  • 1200:$2.8449
  • 2000:$2.7340
  • 4000:$2.6990
  • 10000:$2.6315
  • 20000:$2.5673
IRFP4668PBF
DISTI # IRFP4668PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP4668PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 302
  • 1:$3.1900
  • 10:$3.0900
  • 25:$3.0900
  • 50:$2.9900
  • 100:$2.8900
  • 500:$2.7900
  • 1000:$2.7900
IRFP4668PBF
DISTI # 19P2518		Infineon Technologies AGN CHANNEL MOSFET, 200V, 130A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:130A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:30V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes113
  • 1:$7.2400
  • 10:$6.5300
  • 25:$6.2400
  • 50:$5.8300
  • 100:$5.4100
  • 250:$5.1700
IRFP4668PBF.
DISTI # 26AC0529		Infineon Technologies AGTRENCH_MOSFETS ROHS COMPLIANT: YES0
  • 1:$7.3800
  • 10:$6.6600
  • 25:$6.2400
  • 50:$5.8300
  • 100:$5.4100
  • 250:$5.1700
IRFP4668PBF
DISTI # 70017926		Infineon Technologies AGMOSFET,N Ch.,200V,130A,9.7 MOHM,161 NC QG,TO-247AC,Pb-Free
RoHS: Compliant		69
  • 1:$10.2290
  • 10:$9.0250
  • 100:$7.8680
  • 500:$6.8190
  • 1000:$6.0170
IRFP4668PBF
DISTI # 942-IRFP4668PBF		Infineon Technologies AGMOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg
RoHS: Compliant		4000
  • 1:$6.5800
  • 10:$5.9400
  • 25:$5.6700
  • 100:$4.9200
  • 250:$4.7000
IRFP4668PBFInfineon Technologies AGSingle N-Channel 200 V 9.7 mOhm 161 nC HEXFET Power Mosfet - TO-247AC
RoHS: Compliant		413Tube
  • 5:$4.2100
  • 50:$3.6500
  • 200:$3.2100
IRFP4668PBFInternational Rectifier130A, 200V, 0.0097OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC4
  • 2:$5.0000
  • 1:$7.5000
IRFP4668PBF
DISTI # 6887027		Infineon Technologies AGMOSFET N-CH 200V 130A HEXFET TO247AC, EA388
  • 1:£4.8400
  • 13:£4.3600
IRFP4668PBF
DISTI # 6887027P		Infineon Technologies AGMOSFET N-CH 200V 130A HEXFET TO247AC, TU1575
  • 13:£4.3600
IRFP4668PBF
DISTI # 1249022		Infineon Technologies AGMOSFET N-CH 200V 130A HEXFET TO247AC, TU200
  • 25:£3.8100
  • 125:£3.2340
  • 250:£3.0970
IRFP4668PBFInternational Rectifier 307
    IRFP4668PBF
    DISTI # IRFP4668PBF    		Infineon Technologies AGN-Ch 200V 130A 520W 0,0097R TO247AC
    RoHS: Compliant    		240
    • 5:€4.6100
    • 25:€4.0100
    • 100:€3.8100
    • 200:€3.6700
    IRFP4668PBFInfineon Technologies AG 162
      IRFP4668PBFInfineon Technologies AG200V,9.7m,130A,N-Channel Power MOSFET125
      • 1:$5.8000
      • 100:$4.8400
      • 500:$4.2700
      • 1000:$4.1500
      IRFP4668PBF
      DISTI # 1684526      		Infineon Technologies AGMOSFET, 200V 130ATO-247AC
      RoHS: Compliant      		0
      • 1:£4.8400
      • 5:£4.5200
      • 10:£3.6300
      • 50:£3.4300
      • 100:£3.2300
      IRFP4668PBF
      DISTI # XSFP00000147587      		Infineon Technologies AGPower Field-Effect Transistor, 60A I(D),250V,0.033ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		1590
      • 25:$8.4200
      • 1590:$7.6500
      IRFP4668PBF
      DISTI # C1S322000600128      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		22
      • 400:$3.9010
      IRFP4668PBF
      DISTI # C1S327400142937      		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube
      RoHS: Compliant      		1506
      • 500:$4.3500
      • 250:$4.7600
      • 100:$5.0200
      • 50:$5.7900
      • 10:$6.1200
      • 1:$6.7800
      IRFP4668PBF
      DISTI # C1S322000515343      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		2446
      • 200:$4.3200
      • 100:$5.2100
      • 50:$5.6400
      • 25:$6.1400
      • 10:$6.2800
      • 1:$9.2200
      IRFP4668PBF
      DISTI # 1684526      		Infineon Technologies AGMOSFET, 200V 130ATO-247AC
      RoHS: Compliant      		157
      • 1:$8.9900
      • 25:$7.2200
      • 100:$6.5800
      • 500:$6.1700
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