 | |  | |
| PartNumber | IPP80P03P4L-04 | IPP80P03P4L04AKSA1 | IPP80P03P4L-07 |
| Description | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | MOSFET P-Ch -30V -80A TO220-3 OptiMOS-P2 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 7 mOhms | 3.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 2 V | - |
| Vgs Gate Source Voltage | 4.5 V | 5 V, - 16 V | - |
| Qg Gate Charge | 125 nC | 160 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 137 W | 137 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS-P2 | XPP80P03 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 40 ns | 40 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 140 ns | 140 ns | - |
| Typical Turn On Delay Time | 17 ns | 17 ns | - |
| Part # Aliases | IPP80P03P4L04AKSA1 IPP8P3P4L4XK SP000396390 | IPP80P03P4L-04 IPP8P3P4L4XK SP000396390 | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |