PartNumber | SQ1922AEEH-T1_GE3 | SQ1922EEH-T1_GE3 | SQ1920 |
Description | MOSFET Dual Nch 20V Vds SOT-363 | MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | SC-70-6 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 0.85 A | 840 mA | - |
Rds On Drain Source Resistance | 300 mOhms | 350 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1 V | - |
Vgs Gate Source Voltage | 12 V | 12 V | - |
Qg Gate Charge | 1.2 nC | 700 pC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 1.5 W | 1.5 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Series | SQ | SQ | - |
Transistor Type | 2 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Fall Time | 6 ns | 6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 9.6 ns | 12 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 8 ns | 15 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Qualification | - | AEC-Q101 | - |