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2SA812-M6-TP by Micro Commercial Components | GP BJT | Arrow.com

Trans GP BJT PNP 50V 0.1A 200mW 3-Pin SOT-23 T/R. ... Maximum Collector-Emitter Voltage (V) ... Maximum Collector-Emitter Saturation Voltage (V)

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2SA812 - Datasheet catalog

SILICON TRANSISTOR. 2sa812. PNP SILICON EPITAXIAL TRANSISTOR. MINI MOLD. DATA SHEET. Document No. D17119EJ2V0DS00 (2nd edition).

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Characteristics of the 2sa812 bipolar transistor. Type - p-n-p; Collector-Emitter Voltage: -50 V; Collector-Base Voltage: -60 V; Emitter-Base Voltage: -5 V ...

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2SA812

本文欄外の 印は，本版で改訂された主な箇所を示しています。 2sa812. シリコン・ トランジスタ. Silicon Transistor. データ・シート. 資料番号 D17119JJ4V0DS00（第4版）.

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DC COMPONENTS CO., LTD.

2sa812. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR.

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2SA812

2sa812. Rev.E Mar.-2016. DATA SHEET http://www.fsbrec.com. 1 / 6. SOT-23 塑封封装PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.

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2SA812

Symbol. Parameter. Value. Units. VCBO. Collector- Base Voltage. -60. V. VCEO. Collector-Emitter Voltage. -50. V. VEBO. Emitter-Base Voltage. -5. V. IC.

Silicon Epitaxial Planar Transistor 2SA812

2sa812. E010 www.gmesemi.com. Rev.A. 1. FEATURES. ○ Commplementary to 2SC1623. ○ High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA).

SOT-23 Plastic-Encapsulate Transistors 2SA812

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. SOT-23 Plastic-Encapsulate Transistors. 2sa812 TRANSISTOR (PNP). FEATURES. ○.

2SA812 - Tip

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified). 2sa812. Version 1.0J | Sept 2013 www.tipsemi.com. SOT-23. 1. BASE. Unit : mm. 2.

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2SA812 Транзистор

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Sot-23 Bipolar Transistor---2SA812 - Made-in-China.com

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BL Galaxy Electrical Silicon Epitaxial Planar Transistor 2SA812

Silicon Epitaxial Planar Transistor. 2sa812. Document number: BL/SSSTC010 www.galaxycn.com. Rev.A. 1. FEATURES. ○ Commplementary to 2SC1623. Pb.

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