PartNumber | 2SA1163-BL(TE85L,F | 2SA1163-GR,LF | 2SA1163-BL,LF |
Description | Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO | Bipolar Transistors - BJT 120V 100MA PNP TRANSISTOR | Bipolar Transistors - BJT Transistor for Low Freq. Amplification |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-346-3 | - | TO-236-3 |
Transistor Polarity | PNP | - | PNP |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | - 120 V | - | - 120 V |
Collector Base Voltage VCBO | - 120 V | - | - 120 V |
Emitter Base Voltage VEBO | - 5 V | - | - 5 V |
Collector Emitter Saturation Voltage | - 0.3 V | - | - 300 mV |
Maximum DC Collector Current | - 100 mA | - | - |
Gain Bandwidth Product fT | 100 MHz | - | 100 MHz |
Series | 2SA1163 | 2SA1163 | 2SA1163 |
DC Current Gain hFE Max | 700 | - | 700 |
Packaging | Reel | Reel | Reel |
Brand | Toshiba | Toshiba | Toshiba |
Continuous Collector Current | - 100 mA | - | - |
DC Collector/Base Gain hfe Min | 200 | - | 200 |
Pd Power Dissipation | 150 mW | - | 150 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | - | 0.000423 oz | 0.000423 oz |
Technology | - | - | Si |
Maximum Operating Temperature | - | - | + 125 C |