PartNumber | R8002ANJFRGTL | R8002ANX | R8005ANJFRGTL |
Description | MOSFET Nch 800V Vdss 2A ID TO-263(D2PAK); LPTS | MOSFET 10V Drive Nch MOSFET | MOSFET Nch 800V Vdss 5A ID TO-263(D2PAK); LPTS |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | TO-263S-3 | TO-220FP-3 | TO-263S-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 800 V | 800 V |
Id Continuous Drain Current | 2 A | 2 A | 5 A |
Rds On Drain Source Resistance | 4.3 Ohms | 4.3 Ohms | 2.1 Ohms |
Vgs th Gate Source Threshold Voltage | 3 V | - | 3 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 13 nC | 12.7 nC | 20 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 62 W | 35 W | 120 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | Bulk | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Forward Transconductance Min | 0.5 S | - | 1 S |
Fall Time | 70 ns | 70 ns | 27 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 25 ns | 20 ns | 30 ns |
Factory Pack Quantity | 1000 | 500 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 35 ns | 33 ns | 50 ns |
Typical Turn On Delay Time | 20 ns | 17 ns | 25 ns |
Technology | - | Si | - |
Series | - | R8002ANX | - |
Part # Aliases | - | R8002ANX | - |
Unit Weight | - | 0.211644 oz | - |