PartNumber | STW45N60DM6 | STW45N60DM2AG |
Description | MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages | MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V |
Id Continuous Drain Current | 30 A | 34 A |
Rds On Drain Source Resistance | 99 mOhms | 93 mOhms |
Vgs th Gate Source Threshold Voltage | 3.25 V | 4 V |
Vgs Gate Source Voltage | 25 V | 25 V |
Qg Gate Charge | 44 nC | 56 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 210 W | 250 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | MDmesh | MDmesh |
Series | STW45N60DM6 | STW45N60DM2AG |
Transistor Type | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 7.3 ns | 6 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 5.3 ns | 27 ns |
Factory Pack Quantity | 600 | 600 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 50 ns | 85 ns |
Typical Turn On Delay Time | 15 ns | 29 ns |
Qualification | - | AEC-Q101 |
Height | - | 5.15 mm |
Length | - | 20.15 mm |
Product | - | Power MOSFET |
Type | - | High Voltage |
Width | - | 15.75 mm |
Unit Weight | - | 1.340411 oz |