PartNumber | STW48N60M2 | STW48N60M2-4 | STW48N60DM2 |
Description | MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package | MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package | MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-4 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 42 A | 42 A | 40 A |
Rds On Drain Source Resistance | 70 mOhms | 60 mOhms | 65 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 3 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 70 nC | 70 nC | 70 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 300 W | 300 W | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | MDmesh | MDmesh | MDmesh |
Packaging | Tube | Tube | - |
Series | STW48N60M2 | STW48N60M2-4 | STW48N60DM2 |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 119 ns | 119 ns | 9.8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 17 ns | 17 ns | 27 ns |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 ns | 13 ns | 131 ns |
Typical Turn On Delay Time | 18.5 ns | 18.5 ns | 27 ns |
Unit Weight | 1.340411 oz | - | 1.340411 oz |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | - | - |