CGH55030F2 High Electron Mobility Transistor (HEMT

CGH55030F2 High Electron Mobility Transistor (HEMT

Wolfspeed's CGH55030F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, making it ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange, and solder-down pill packages. Based on appropriate external match adjustment, the CGH55030F2 is suitable for applications up to 6 GHz.

Features
  • 4.5 GHz to 6.0 GHz operation
  • 12 dB small signal gain at 5.65 GHz
  • 30 W typical PSAT
  • 60% efficiency at PSAT
  • 28 V operation
Applications
  • 2-way private radio
  • Broadband amplifiers
  • Cellular infrastructure
  • Test instrumentation
  • Class A, AB amplifiers for drivers and gain blocks

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