Comprised of four 60 V N-channel MOSFET and utilizing ON Semiconductor's GreenBridge™ technology, the FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation. Available in a thermally enhanced, space-saving 4.5 mm x 5.0 mm MLP 12-lead package, the device eliminates the need for a heat sink enabling a compact design that increases power conversion efficiency in 12 V_AC and 24 V_AC applications.

Excessive heat generation in high-definition, compact, active-bridge applications such as network cameras can cause image quality issues. Similarly, thermally induced noise can affect the system’s image sensors, which can also degrade the camera’s picture quality. The typical heat sinking solution to regulate thermal fluctuations can further complicate these intricate designs with added component count and cluttered board space. ON Semiconductor’s FDMQ86530L 60 V quad-MOSFET provides designers with an all-in-one package to help with these critical design challenges.