100 V TrenchFET® Power MOSFETs

By Vishay/Siliconix 142

100 V TrenchFET® Power MOSFETs

Vishay Siliconix's SiB456DK and SiA416DJ are the industry's first 100 V, n-channel devices in the compact, thermally-enhanced PowerPAK® SC-75 1.6 mm x 1.6 mm and PowerPAK SC-70 2 mm x 2 mm footprint areas. The devices offer on-resistance of less than 200 mΩ and 100 mΩ respectively.

These MOSFETs are optimized for boost converters, low-power DC/AC inverters, and primary-side-switching, miniature DC/DC converters for telecom bricks, point-of-load applications, and LED lighting in portable equipment. For designers, the devices' ultra-compact PowerPAK SC-75 and PowerPAK SC-70 packages save PCB space in these applications, while their low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency. In addition, the MOSFETs on-resistance rating down to 4.5 V simplifies gate drives.

The SiB456DK and SiA416DJ are 100% Rg and UIS tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS directive 2011/65/EU.

SiB456DK Features
  • TrenchFET® Power MOSFET
  • Thermally enhanced PowerPAK® SC-75 package
    • Small footprint area
    • Low on-resistance
  • 100% Rg and UIS tested
SiA416DJ Features
  • TrenchFET® Power MOSFET
  • 100% Rg and UIS tested
  • DC/DC converters
  • Full-bridge converters
  • Power bricks and POL power