CGHV27200 Telecom Transistor

CGHV27200 Telecom Transistor

Cree's CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high-gain and wide-bandwidth capabilities. This makes the CGHV27200 ideal for 2.5 GHz to 2.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Features
  • 2.5 GHz to 2.7 GHz operation
  • 16 dB gain
  • -37 dBc ACLR at 40 W PAVE
  • 30% efficiency at 40 W PAVE
  • High degree of DPD correction can be applied

New Products:

CGHV27200FCGHV27200-TB

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