Vishay extended its offering of TrenchFET^® Gen III p-channel power MOSFETs with -40 V and -30 V devices offered in the PowerPAK^® 1212-8 and PowerPAK 1212-8S packages. Featuring industry-low on-resistance at -10 V and -4.5 V gate drives, the Vishay Siliconix SiS443DN is the first -40 V p-channel Gen III device, while the SiSS27DN is the first -30 V MOSFET in the PowerPAK 1212-8S package.

The SiS443DN and SiSS27DN are optimized for 24 V, 19 V, and 12 V load switches, as well as adapter and battery switches in a wide range of applications, including power management in mobile computing, smartphones, and tablets. The devices' industry-low on-resistance allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.

In applications requiring a higher voltage rating, the -40 V SiS443DN provides maximum on-resistance of 11.7 milliohms (-10 V) and 16 milliohms (-4.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8 package. When on-resistance is critical, the SiSS27DN offers extremely low values of 5.6 milliohms (-10 V) and 9 milliohms (-4.5 V) in the PowerPAK 1212-8S package with a low 0.75 mm profile.