Vishay Semiconductor/Opto Division has broadened its optoelectronics portfolio. The company introduced two high-speed 850 nm and 940 nm infrared emitters and a package-matched high-speed silicon PIN photodiode with high radiant sensitivity from 780 nm to 1050 nm. The VSMG10850, VSMB10940, and VEMD10940F offer an ultra-wide ±75° angle of half-intensity in a compact side-view surface-mount package measuring 3 mm by 2 mm and a height of only 1 mm. Offered in clear, untinted plastic packages, the IR emitters provide high radiant intensity of 1 mW/sr typical at 20 mA, up to 33% higher than comparable devices on the market, and fast switching times of 15 ns. The 940 nm VSMB10940 features GaAIAs multi-quantum well technology and a low-forward voltage of 1.3 V typical. The 850 nm VSMG10850 offers GaAIAs double hetero technology and a forward voltage of 1.4 V. The VEMD10940F photodiode features a daylight blocking filter matched with 830 nm to 950 nm IR emitters, including the VSMG10850 and VSMB10940. The device offers a reverse light current of 3 µA, low dark current of 1 nA, 920 nm wavelength of peak sensitivity, and a low 0.1-%/K temperature coefficient of light current.