Vishay Siliconix introduces 8 V, n-channel TrenchFET® Power MOSFETs with industry-low on-resistance down to 20 mΩ at 4.5 V. These devices come in chip scale, MICRO FOOT®, 1 mm x 1 mm and 1.6 mm x 1.6 mm packages.
For applications where low on-resistance is more critical than space, Vishay’s 8 V n-channel Si8424CDB TrenchFET power MOSFET offers maximum on-resistance of 20 mΩ. This comes with a 4.5 V gate drive in a 1.6 mm x 1.6 mm x 0.6 mm CSP MICRO FOOT package.
With 43 mΩ maximum on-resistance at 4.5 V, the smaller 1 mm x 1mm x 0.55 mm Si8466EDB 8 V n-channel MOSFET may be used for space-critical applications.
The Si8466EDB and Si8424CDB are the latest expansion to the MICRO FOOT family.
| Benefits |
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- Compact 1 mm x 1 mm x 0.55 mm and 1.6 mm x 1.6 mm x 0.6 mm MICRO FOOT packages
- Saves PCB space and provides ultra-thin profiles to enable slimmer and lighter portable electronics
- On-resistance down to 20 mΩ maximum at a 4.5 V gate drive
- Lower conduction losses for reduced power consumption and longer battery life between charges
- Lower voltage drop across the load switch to prevent unwanted under-voltage lockout
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- Si8466EDB provides 3000 V typical ESD protection
- Si8424CDB and Si8466EDB each offer on-resistance ratings down to 1.2 V
- Allows the devices to work with the lower-voltage gate drives and lower bus voltages common in handheld devices
- Saves the space and cost of level-shifting circuitry
- Compliant to RoHS Directive 2011/65/EU
- Halogen-free, according to the JEDEC JS709A definition
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| Applications |
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- Battery or load switching in power management applications for portable electronics such as:
- Smart phones
- Tablet PCs
- Mobile computing devices
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