N-Channel 8 V (D-S) MOSFETs

By Vishay/Siliconix 52

N-Channel 8 V (D-S) MOSFETs

Vishay Siliconix introduces 8 V, n-channel TrenchFET® Power MOSFETs with industry-low on-resistance down to 20 mΩ at 4.5 V. These devices come in chip scale, MICRO FOOT®, 1 mm x 1 mm and 1.6 mm x 1.6 mm packages. 

For applications where low on-resistance is more critical than space, Vishay’s 8 V n-channel Si8424CDB TrenchFET power MOSFET offers maximum on-resistance of 20 mΩ. This comes with a 4.5 V gate drive in a 1.6 mm x 1.6 mm x 0.6 mm CSP MICRO FOOT package. 

With 43 mΩ maximum on-resistance at 4.5 V, the smaller 1 mm x 1mm x 0.55 mm Si8466EDB 8 V n-channel MOSFET may be used for space-critical applications. 

The Si8466EDB and Si8424CDB are the latest expansion to the MICRO FOOT family.

  • Compact 1 mm x 1 mm x 0.55 mm and 1.6 mm x 1.6 mm x 0.6 mm MICRO FOOT packages
    • Saves PCB space and provides ultra-thin profiles to enable slimmer and lighter portable electronics
  • On-resistance down to 20 mΩ maximum at a 4.5 V gate drive
    • Lower conduction losses for reduced power consumption and longer battery life between charges
    • Lower voltage drop across the load switch to prevent unwanted under-voltage lockout
  • Si8466EDB provides 3000 V typical ESD protection
  • Si8424CDB and Si8466EDB each offer on-resistance ratings down to 1.2 V
    • Allows the devices to work with the lower-voltage gate drives and lower bus voltages common in handheld devices
    • Saves the space and cost of level-shifting circuitry
  • Compliant to RoHS Directive 2011/65/EU
  • Halogen-free, according to the JEDEC JS709A definition
  • Battery or load switching in power management applications for portable electronics such as:
    • Smart phones
    • Tablet PCs
    • Mobile computing devices