Vishay's Si7655DN, -20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package offers on-resistance of just 4.8 mΩ maximum at a 4.5 V gate drive. The Si7655DN is also the first device to be released in a new version of the Vishay Siliconix PowerPAK® 1212 package, which enables lower-RDS(ON) devices while providing a 28 % slimmer nominal profile of 0.75 mm and maintaining the same PCB land pattern.
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Applications |
- New version of 3.3 mm by 3.3 mm PowerPAK 1212 package features a slimmer 0.75 mm profile
- Saves valuable board space and height
- Utilizes industry-leading P-channel Gen III technology
- Ultra-low maximum on-resistance of 3.6 mΩ at a 10 V gate drive, 4.8 mΩ at 4.5 V, and 8.5 mΩ at 2.5 V
- Improvement of 17 % or better over next best competing -20 V devices
- Allows designers to achieve lower voltage drops in their circuits and longer battery run times
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- Load switching and hot swapping in industrial systems; adaptor, battery, and load switches in charger circuits; and power management for smart phones, tablet PCs, and other mobile computing devices
- Redundancy switching, OR-ing, and supervisory applications in fixed telecom, cell phone base station, and server/computer systems
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