Vishay Siliconix's SiA436DJ 8 V, N-channel TrenchFET power MOSFET is designed to save valuable PCB space in portable electronics. For these devices, the MOSFET’s on-resistance values are 18% lower than previous generation solutions, and up to 64% lower than the closest competing N-channel device in the 2 mm x 2 mm footprint area. This ultra-low on-resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ’s on-resistance ratings down to 1.2 V simplify circuit design by allowing the MOSFET to work with the low-voltage power rails common in handheld devices, providing longer battery operation between charges.