By ON Semiconductor 241
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop (FS) Trench construction, and provide superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant- or soft-switching applications. Incorporated into the device is a rugged co-packaged, free-wheeling diode with a low forward voltage.
Features | ||
|
|
|
Applications | ||
|
|