Trench and Field Stop IGBTs

By ON Semiconductor 145

Trench and Field Stop IGBTs

ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop (FS) Trench construction, and provide superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant- or soft-switching applications. Incorporated into the device is a rugged co-packaged, free-wheeling diode with a low forward voltage.

  • Low saturation voltage using trench with field stop technology
  • Low switching loss reduces system power dissipation
  • Low gate charge

  • 5 [1]s short-circuit capability
  • Pb-free devices
  • Inverter welding machines
  • Microwave ovens
  • Industrial switching
  • Motor control inverters