Vishay/Siliconix's next-generation TrenchFET Gen IV family of 30 V n-channel power MOSFETs utilize a high-density design. The SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35 mΩ at 4.5 V and low total gate charge in the PowerPAK® SO-8 and 1212-8 packages.

Vishay's next-generation TrenchFET Gen IV family of 30 V n-channel power MOSFETs incorporate technological improvements in silicon design, wafer processing, and device packaging to deliver a number of benefits to designers of today’s power electronics systems. Offering a reduction in on-resistance times silicon area of over 60% compared to previous-generation devices, the Gen IV family is able to achieve industry-best on-resistance for reduced power consumption and higher efficiency.