TrenchFET® Gen IV MOSFETs

TrenchFET® Gen IV MOSFETs

Vishay/Siliconix's next-generation TrenchFET Gen IV family of 30 V n-channel power MOSFETs utilize a high-density design. The SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35 mΩ at 4.5 V and low total gate charge in the PowerPAK® SO-8 and 1212-8 packages.

Vishay's next-generation TrenchFET Gen IV family of 30 V n-channel power MOSFETs incorporate technological improvements in silicon design, wafer processing, and device packaging to deliver a number of benefits to designers of today’s power electronics systems. Offering a reduction in on-resistance times silicon area of over 60% compared to previous-generation devices, the Gen IV family is able to achieve industry-best on-resistance for reduced power consumption and higher efficiency.

Features
  • Next-generation technology optimizes several key specifications:
    • Down to 0.00135 Ω at VGS = 4.5 V
    • Down to ultra-low 0.001 Ω at VGS = 10 V
    • Very low QGD and exceptionally low QGD / QGS ratio: < 0.5
      • QGD / QGS ratio down to 0.3
    • Improved immunity to Cdv/dt gate coupling
  • Thermally enhanced PowerPAK packaging increases system power density
    • Larger current handling capability with PowerPAK SO-8
    • Achieve equal or less power loss in 1/3 the footprint area with PowerPAK 1212-8
Applications
  • Personal computers and peripherals
  • Servers, synchronous rectification/VRMs
  • Telecom equipment/POL
  • DC/DC modules
  • OR-ing/power redundancy
  • Game consoles
  • DC/AC inverters/industrial

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