FDMC86570L 60 V N-Channel Shielded Gate PowerTrenc
The N-channel MOSFET is produced using ON Semiconductor advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.
Features
Shielded gate MOSFET technology
Max RDS(ON) = 4.3 mΩ at VGS = 10 V, ID = 18 A
Max RDS(ON) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
High-performance technology for extremely-low RDS(ON)
