Vishay extends its offering of TrenchFET® P-channel Gen III Power MOSFETs with new devices in the PowerPAK® ChipFET® and PowerPAK 1212-8S packages. Designed to increase power efficiency in mobile computing and industrial control devices, the Vishay Siliconix MOSFETs feature the industry's lowest on-resistance for -12 V and -20 V devices at -4.5 V and -2.5 V gate drives in the 3.0 mm by 1.9 mm and 3.3 mm by 3.3 mm footprint areas. With their industry-low on-resistance at -4.5 V and -2.5 V gate drives, the Si5411EDU, Si5415AEDU, and SiSS23DN allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. In applications where saving PCB space is critical, the -12 V Si5411EDU and -20 V Si5415AEDU offer low on-resistance down to 8.2 mΩ (-4.5 V) and 11.7 mΩ (-2.5 V) in the 3.0 mm by 1.9 mm PowerPAK ChipFET package. For applications requiring extremely-low on-resistance, the SiSS23DN provides values of 4.5 mΩ ( -4.5 V) and 6.3 mΩ (-2.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8S package with a low 0.75 mm profile.