High Power GaN Power ICs

By RFMD 86

High Power GaN Power ICs

RFMD’s GaN Power ICs (PICs) are wideband power amplifiers designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios, and general purpose amplification. Using an advanced, high power-density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and power over a large instantaneous bandwidth in a single amplifier design.

These GaN discrete amplifiers are 50 Ω input-matched, packaged in a small form-factor 5 x 6 mm SOIC-8 outline air cavity ceramic package that provides excellent thermal stability through the use of advanced heatsink and power dissipation technologies. Ease of integration is accomplished through the incorporation of an optimized, input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

Features
  • Advanced GaN HEMT technology
  • Advanced heat sink technology
  • Input internally matched to 50 Ω
  • High power-added efficiency
  • -40°C to 85°C operating temperature
  • Wide, instantaneous bandwidth
  • Large-signal models available

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