High Power GaN UPTs

By RFMD 140

High Power GaN UPTs

RFMD has developed a family of GaN unmatched power transistors (UPTs), comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor process, these high-performance amplifiers from RFMD show excellent peak-drain efficiency and flat gain over a broad frequency range in a single amplifier design. The RF393x family consists of 30 W to 120 W, GaN unmatched power transistors assembled in a 2-lead flanged ceramic package, which provides excellent thermal stability and is ideally suited for CW and pulsed applications. Ease of integration and tuning is accomplished through the incorporation of simple optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.

RFMD has defined a GaN production model that best leverages the cost advantages attained by manufacturing in our existing wafer factory – the world’s largest III-V commercial wafer factory – located near their corporate headquarters in Greensboro, North Carolina. Commercializing semiconductor processes is an RFMD strength, forged with the successful release of the industry’s first GaAs HBT power amplifier for the high-volume cellular handset market. Applying that knowledge to the development of gallium nitride (GaN) transistors for the wireless infrastructure, commercial, and military markets is an RFMD advantage.

  • High power density > 6 W/mm
  • Advanced 0.5 μm GaN HEMT process
  • High gain > 14 dB at 2.1 GHz
  • High peak drain efficiency > 65% at 2.1 GHz
  • Advanced heat sink package technology
  • ESD performance of Class 1 A HBM, and Class A MM
  • Maximum junction temperature = 200°C for 85°C base plate
  • Broadcast
  • General purpose broadband amplifiers
  • Cellular wireless infrastructure
  • High power radars
  • Public mobile radio
  • Aerospace and defense
  • Industrial/scientific/medical