The recent emergence and commercialization of silicon carbide (SiC) technology in the power semiconductor industry has brought to light significant performance advances in the development of low loss, high temperature discrete power components. IXYS/Littelfuse has combined the latest silicon carbide diode technology with its advanced GenX3™ IGBT platform, enabling critical applications like switch mode power supplies, motor drives, power factor correction circuits, and wind and solar inverters to achieve new levels of performance and energy efficiency. This integration results in a significant reduction in dynamic losses in both the IGBT and diode, giving way to substantial system-level performance improvements.