VOW3120 Wide Body 2.5 A IGBT and MOSFET Driver

By Vishay Semiconductor / Opto Division 76

VOW3120 Wide Body 2.5 A IGBT and MOSFET Driver

Vishay's VOW3120 consists of an infrared light-emitting diode optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control and inverter applications. The high operating voltage range of the output stage provides the drive voltages required by gate-controlled devices. The voltage and current supplied by this optocoupler makes it ideally suited for directly driving IGBTs with ratings up to 1200 V/100 A. For IGBTs with higher ratings, the VOW3120 can be used to drive a discrete power stage which drives the IGBT gate. The VOW3120 provides higher isolation for applications operating at higher working voltages, and/or higher pollution degree criteria. Higher VIORM, VIOTM, creepage and clearance distances make the VOW3120 ideal for many industrial control and power-conversion applications.

Features Applications
  • 2.5 A minimum peak output current
  • 10 mm minimum external creepage distance
  • 25 kV/μs minimum common-mode rejection
  • ICC = 2.5 mA maximum supply current
  • Under-voltage lock-out (UVLO) with hysteresis
  • Wide operating VCC range: 15 V to 32 V
  • 0.2 μs maximum pulse width distortion
  • Industrial temperature range: -40°C to +100°C
  • 0.5 V maximum low level output voltage (VOL)
  • Industrial welding equipment
  • Motor drives
  • Industrial inverters
  • Commercial and residential solar inverters
  • Wind-generator inverters
  • EV and plug-in HEV chargers

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