U-MOSⅧ-H MOSFETs

U-MOSⅧ-H MOSFETs

Toshiba's U-MOSⅧ-H are the 8th generation of high-speed trench-structure MOSFETs. U-MOSⅧ-H is a high-efficiency MOSFET series especially designed for use in the secondary side of AC-DC and DC-DC power supplies. Fabricated with the latest trench MOS process and optimized cell design, U-MOSⅧ-H achieves excellent trade-offs between on-resistance and capacitances, such as input, reverse transfer, and output capacitance. U-MOSⅧ-H will help improve the efficiency of power supplies.

Features
  • Provides significantly better trade-offs between on-resistance (Ron) and input capacitance (Ciss), compared to the previous Gen-4 (30 V to 100 V), or Gen-7 (30 V) trench MOS process
  • Offers a wide variety of drain-source voltage lineup from 30 V to 250 V
  • Provides high-avalanche ruggedness
  • Makes it possible to reduce radiation noise compared to predecessors
Applications
  • AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays
  • DC-DC power supplies for communication equipment, servers, and data centers

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