P-Ch PowerTrench® MOSFETs

P-Ch PowerTrench® MOSFETs

ON Semiconductor latest medium voltage power 100 V, 150 V PowerTrench MOSFETs are optimized power switches combining small gate charge (Qg), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. The latest 100 V, 150 V PowerTrench MOSFETs employ shielded-gate structure that provides charge balance.

By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66 percent lower than that of previous generations. Soft body diode performance of new PowerTrench MOSFETs is able to eliminate snubber circuit or replace higher voltage rating MOSFET circuit need because it can minimize the undesirable voltage spikes in synchronous rectification. The latest 100 V, 150 V PowerTrench MOSFETs provide designers the opportunity to significantly increase system efficiency and power density in synchronous rectification applications.

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