600 V Trench Ultrafast 66xx Series IGBTs

600 V Trench Ultrafast 66xx Series IGBTs

Infineon Technologies introduces the IR66xx series of high-performance 600 V ultrafast, trench-gate, field stop, insulated-gate bipolar transistors (IGBTs). The new, rugged, reliable family of devices features extremely low conduction and switching losses optimized for welding applications.

Utilizing trench thin-wafer technology to offer lowest conduction and switching losses, the new devices are co-packaged with a soft-recovery low Qrr diode and feature ultra-fast switching (8 KHz-30 KHz) with 5 µs short-circuit rating. The 600 V IGBTs also feature low VCE(ON) and positive temperature coefficient for easy paralleling.

The IR66xx series of IGBTs also features high switching frequency, maximum junction temperature of 175°C and low EMI for improved reliability, higher system efficiency, and rugged transient performance.

Features and Benefits

  • Optimized for welding applications
  • Ultrafast soft-recovery co-pack diode
  • Balanced conduction and switching losses
  • Rugged transient performance for increased reliability
  • Positive VCE(ON) temperature coefficient for easy paralleling
  • 175°C TJ(max) offers higher reliability
  • Low EMI

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