Infineon Technologies introduces the IR66xx series of high-performance 600 V ultrafast, trench-gate, field stop, insulated-gate bipolar transistors (IGBTs). The new, rugged, reliable family of devices features extremely low conduction and switching losses optimized for welding applications.
Utilizing trench thin-wafer technology to offer lowest conduction and switching losses, the new devices are co-packaged with a soft-recovery low Qrr diode and feature ultra-fast switching (8 KHz-30 KHz) with 5 µs short-circuit rating. The 600 V IGBTs also feature low VCE(ON) and positive temperature coefficient for easy paralleling.
The IR66xx series of IGBTs also features high switching frequency, maximum junction temperature of 175°C and low EMI for improved reliability, higher system efficiency, and rugged transient performance.
Features and Benefits