Infineon Technologies introduces the IR66xx series of high-performance 600 V ultrafast, trench-gate, field stop, insulated-gate bipolar transistors (IGBTs). The new, rugged, reliable family of devices features extremely low conduction and switching losses optimized for welding applications.

Utilizing trench thin-wafer technology to offer lowest conduction and switching losses, the new devices are co-packaged with a soft-recovery low Q_rr diode and feature ultra-fast switching (8 KHz-30 KHz) with 5 µs short-circuit rating. The 600 V IGBTs also feature low V_CE(ON) and positive temperature coefficient for easy paralleling.

The IR66xx series of IGBTs also features high switching frequency, maximum junction temperature of 175°C and low EMI for improved reliability, higher system efficiency, and rugged transient performance.

Features and Benefits

• Optimized for welding applications
• Ultrafast soft-recovery co-pack diode
• Balanced conduction and switching losses
• Rugged transient performance for increased reliability
• Positive V_CE(ON) temperature coefficient for easy paralleling
• 175°C T_J(max) offers higher reliability
• Low EMI