Diodes Incorporated has extended its range of ultra-small discrete products for space critical product design. The company has announced a trio of small signal MOSFETs in the tiny DFN0606 package; 20 V and 30 V rated N-channel transistors and a 30 V rated P-channel part.

With a footprint measuring only 0.6 mm x 0.6 mm, each device takes 40% less board space than the commonly used DFN1006 (aka SOT883) packaged MOSFETs, making it an ideal choice in next generation wearable technology, tablets, and smartphones.

Able to deliver a similar or superior performance than many of the larger DFN1006 packaged parts, the DMN2990UFZ (20 V N-channel), DMN31D5UFZ (30 V N-channel) and DMP32D9UFZ (30 V P-channel) have been designed to minimize on-state resistance while maintaining superior switching performance.

• 0.36 mm² footprint - Occupies 40% less board space than the DFN1006 / SOT883 package, enabling designers to shrink designs whilst maintaining performance
• DFN0606 low profile package - Off board height of 0.4 mm making it ideal for thin profile next generation ‘Internet of Things’ designs
• Higher power density - DFN0606 leadless package is thermally efficient with a thermal resistance of only 135°C/W enabling a greater power density to be achieved
• Turn-on V_GS(th) < 1 V - These MOSFETs have V_GS(th) < 1 V enabling low voltage applications to fully enhance the MOSFET channel under low power conditions
• ESD protected gates
• AEC-Q101 qualified
• Lead-free and fully RoHS-compliant
• Halogen- and antimony-free “green” device