FMCA Series SiC Schottky Barrier Diodes

By Sanken 62

FMCA Series SiC Schottky Barrier Diodes

Product with a 650 V breakdown voltage in schottky barrier configuration is realized with use of Sanken's next generation power semiconductor SiC (Silicon Carbide). 

The FMCA series diodes are suitable for continuous current mode PFC circuits. When replaced by 600 V breakdown voltage fast-recovery rectifier diodes, the device is capable of reducing power loss resulting from the recovery current. Therefore it has a large energy-saving effect. Also the downsizing of the equipment can be achieved with its high-speed switching capability.

SiC schottky barrier diodes contribute to minimizing loss in power supply, such as in servers which are increasing with the big data processing. It can also help downsize electrical equipment.

Features:
  • Improve efficiency of the power supply with low-recovery loss characteristics of SiC-SBD
  • Low-resistance, high-speed switching SiC-MOSFET realizes a compact and highly-efficient power supply
  • No thermal runway due to increased current during high-temperature, therefore maintaining stable switching




New Products:

FMCA-11065FMCA-22065

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