DMHC3025LSD and DMHC4035LSD MOSFET H-Bridges

By Diodes Incorporated 45

DMHC3025LSD and DMHC4035LSD MOSFET H-Bridges

Diodes Incorporated has extended its family of dedicated MOSFET H-bridges with the DMHC3025LSD and DMHC4035LSD. These components are designed for space limited single-phase brush and brushless motor driving and inductive wireless charging circuits.

These 30 V and 40 V rated MOSFETs have low RDS(ON) performance allowing them to operate under a high 70°C ambient temperature, while still supporting continuous currents of 3 A and 2 A respectively, thereby accommodating worst-case motor stall currents.

Features
    • Reduce footprint
      • Using single SO8 package, with 5 mm x 6 mm footprint, these H-bridges can save PCB space, reduce component count, and assembly costs
    • Low RDS(ON)
      • < 50 m and minimizes conduction losses, enabling the H-bridges to tolerate high-continuous-current under motor stall conditions
    • High pulsed current
      • 30 A peak pulse capability allows for a high in-rush current to be drawn safely during the start-up of the inductive load
    • Max Drain Voltage
      • 40 V and 30 V VDSS provide sufficient headroom for the intended 24 V and 12 V VCC rail voltages.
Applications
  • DC motor control
  • DC-AC inverters

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