NXP introduces the BLL8Hxx family of RF Power transistors from its 8th generation 50 V LDMOS technology to serve L-band radar applications. The BLL8Hxx family offers excellent broadband operation (1.2-1.4 GHz), and is available in output power levels of 25, 130, 250, and 500 W (P,1 dB). The BLL8Hxx family features integrated dual-sided ESD, internal matching, improved ruggedness, high efficiency (typ. 50%) and excellent thermal stability.
- BLL8H0514-25: 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range
- BLL8H0514L(S)-130: 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range
- BLL8H1214LS-500: 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range
- BLL8H1214L(S)-250: 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range
Features and Benefits
- Easy power control
- Integrated dual-side ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1.2 GHz to 1.4 GHz)
- Internally matched for ease-of-use
- Compliant to directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
Applications
- L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range