By STMicroelectronics 87
STMicroelectronics' STripFET F7 series of low-voltage MOSFETs feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching. Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, industrial automation, and automotive applications.
Compared to the previous STripFET F4 and F3 series, the new F7 series features a much lower on-state resistance per die area. This in turn simplifies designers' needs for high-power designs by reducing the number of paralleled devices.
80 V STripFET F7 MOSFETs in H2PAK for high-current motor control designs with 1.7 mΩ on-state resistance, up to 200 A current capability.
Increase the efficiency of your next high-current motor control design with ST's latest 80 V STripFET F7 MOSFETs assembled in the high-current (up to 200 A), low-thermal resistance 2- and 6-lead H2PAK package. They combine a very low on-state resistance (1.7 mΩ) with an optimized switching behavior in order to meet stringent efficiency requirements, excellent EMI performance, and high avalanche ruggedness for robust designs (STH270N8F7-2 and STH270N8F7-6).
60 V STripFET F7 MOSFETs
ST’s STripFET F7 series of low-voltage trench-based MOSFETs has been extended with the introduction of 60 V devices. They're tailored for synchronous rectification in telecom, server, and desktop-PC power supplies as well as industrial power supplies and DC-DC converters in solar micro-inverters. They help designers increase power density and lower component count by using fewer parallel devices to reach the desired current level. Main features include a very low on-state resistance (down to 1.2 mΩ in a PowerFLAT 5 x 6 package), low gate charge, low Crss/Ciss ratio for EMI immunity and high avalanche ruggedness.
Features and Benefits