1200 V Silicon Carbide (SiC) Diodes, MOSFETs, and

By ROHM Semiconductor 56

1200 V Silicon Carbide (SiC) Diodes, MOSFETs, and

SiC is emerging as the most viable candidate in the search for a next-generation, low-loss element due to its low ON resistance and superior characteristics under high temperatures. ROHM is developing SiC power devices and modules for improved power savings in a number of applications, from high efficiency inverters in DC/AC converters for solar/wind power supplies and electric/hybrid vehicles to power inverters for industrial equipment and air conditioners.

Features Applications
  • Low ON resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to driver
  • Pb-free lead plating
  • RoHS-compliant
  • Solar inverters
  • DC/DC converters
  • Switch-mode power supplies
  • Induction heating
  • Motor drives

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