M Series 650 V IGBTs

By STMicroelectronics 48

M Series 650 V IGBTs

The M-series 650 V IGBTs from STMicroelectronics offer designers a fast and affordable way to increase the efficiency of HVAC motor drives, uninterruptible power supplies, solar power converters, and all power-conversion applications working up to 20 kHz in hard-switching circuit topologies.

Built using ST's third generation of trench-gate field-stop low-loss technology, the M-series IGBTs feature a new trench gate and a specially designed P-N-P vertical structure that together deliver the best trade-off between conduction and switch-off losses and significantly improve the overall performance of the devices. A short-circuit withstand time of 6 µs minimum at 150°C starting junction temperature, the extended maximum operating junction temperature of 175°C, and a wide safe operating area (SOA) extend service lifetime and boost reliability in applications where high power dissipation is required.

Furthermore, the devices are available in packages that include a new generation of free-wheeling diodes optimized for fast recovery while maintaining a low forward drop and a high level of softness. This provides excellent EMI protection while reducing switch-on losses. The positive VCE(sat) temperature coefficient, together with tight parameter distribution, enable the devices to be safely paralleled for even higher power requirements.

Features:

  • 650 V operation, compared to 600 V for most competitive devices
  • Low VCE(sat) (1.55 V at 25°C) to minimize conduction losses
  • Outstanding robustness with large SOA and latch-free operation
  • The industry's best Etot vs VCE(sat) trade-off
  • 175°C maximum operating junction temperature
  • 6 µs of minimum short-circuit withstand capability at high temperature
  • Very limited voltage overshoot and no oscillation during switch-off

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