600 V MDmesh M2 EP MOSFETs

By STMicroelectronics 37

600 V MDmesh M2 EP MOSFETs

MDmesh M2 EP is STMicroelectronics' latest generation of high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle. They are tailored to provide high performance in hard and soft switching topologies (e.g. PFC, LLC). Thanks to its strip layout and an improved vertical structure, the technology exhibits low on-resistance, low Qg, and optimized switching characteristics with very low turn-off switching losses. This enables more efficient, compact, and lighter solutions.

Features Benefits
  • Extremely low Qg
  • Optimized capacitance profile for light load conditions
  • Optimized Vth and Rg values for soft switching
  • Body diode ruggedness
  • Improved efficiency especially in light load condition in PFC and resonant topologies (i.e. LLC)
  • Reduced switching losses for wide range of load and input voltage
  • Suitable for hard and soft-switching topologies
  • Safe design

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