Toshiba's DTMOS IV-H high-speed switching series, consisting of the TK25N60X, TK25E60X, TK25A60X, TK31N60X, TK31E60X, TK31V60X, TK39N60X, and TK62N60X, is based on Toshiba’s fourth generation 600 V super junction MOSFET DTMOS IV series.

Using Toshiba’s state-of-the-art single epitaxial process, the DTMOS IV-H series of super junction MOSFETs is ideally suited to applications that require high reliability, power efficiency, and a compact design. These applications include high-efficiency switching power supplies for servers and telecom base stations; and power conditioners for photovoltaic inverters.

The DTMOS IV-H series achieves a high-speed switching performance while keeping the low ON-resistance level of conventional DTMOS IV, all without loss of power. This is accomplished through the reduction of parasitic capacitance between gate and drain (typical Ciss ranges from 2400 pF to 6500 pF), which also contributes to improved power efficiency and downsizing of products.

Gate pattern optimization results in a 45% reduction in gate-drain charge (typical Qg ranges from 40 nC to 135 nC) when compared with conventional DTMOS IV. The product lineup features low ON-resistance R_DS(ON) maximum at VGS = 10 V from 0.125 Ω to 0.040 Ω and the devices only suffer a small increase in low ON-resistance at high temperatures due to the use of the single epitaxial process.

The DTMOS IV-H series is currently available in a TO-247, TO-220, TO-220SIS, and an 8 mm x 8 mm DFN package.