ZXMS6004 IntelliFET

By Diodes Incorporated 71

ZXMS6004 IntelliFET

Diodes Incorporated has extended the ZXMS6004 family of self-protected, low-side IntelliFETs to include the industry-standard SO-8 package in single (ZXMS6004N8) and dual (ZXMS6004DN8) configurations. Unlike standard MOSFET switches, ZXMS6004 integrates both the MOSFET and smart circuitry into a single, thermally efficient package. ZXMS6004 is designed to protect both the device and the load, featuring overvoltage, overcurrent, over-temperature, and ESD protection functions and can be used as a general-purpose switch driven from 3.3 V or 5 V microcontrollers. The ZXMS6004 is designed for use in harsh environments where standard MOSFETs are not rugged enough. Additionally, savings on component count, PCB size, complexity, and overall system cost can be achieved. ZXMS6004 is ideally suited for a range of consumer and industrial applications. These include lamp, relay, and solenoid driving, remote I/O controller outputs, distributed I/O modules, alarm systems, GPS systems, and HVAC. The industry-standard SO-8 package is ideally suited for today’s high-speed, fully automated assembly processes and is fully green and RoHS-compliant.

Features
  • ESD protection
    • The input clamping diodes protect the MOSFET’s gate and the protection circuitry to 4 kV (human body model). The drain-source is protected by its built-in Miller capacitance, active clamping, and reverse (body-drain) diode
  • Over-temperature protection
    • The over-temperature protection circuit, containing both temperature sensor and hysteresis sub-circuits, turns off the internal gate to interrupt the dissipation when the device reaches a temperature of (TJT TYP=175°C). The internal gate is turned back on when the temperature drops by approximately +10°C
  • Overvoltage protection
    • The active clamping circuit protects the MOSFET and the load. If the circuit detects the presence of voltages above 65 V, the active clamp (VDS(AZ) TYP=65V) allows the whole powered area to turn on and share the overvoltage energy
  • Overcurrent protection
    • The over-current protection circuit reduces gate drive which limits the MOSFET’s current when VDS is large enough to cause excess power dissipation
Applications
  • GPS
  • HVAC
  • Distributed I/O modules
  • Alarm systems

Categories

Top