STMicroelectronics' latest high-efficiency fast recovery diode MOSFET series featuring very low recovery charge (Q_rr) and recovery time (t_rr) is optimized for high-voltage full-bridge and half-bridge topologies requiring high switching performance. These 600 V devices also feature ultra-low Qg, extremely low Coss / Ciss, very low on-state resistance, and high dv/dt ruggedness.