AS4C512M16D3L High-Speed, Low-Voltage CMOS DDR3L S

AS4C512M16D3L High-Speed, Low-Voltage CMOS DDR3L S

Alliance Memory's AS4C512M16D3L monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) features an 8 GB density 96-ball, 9 mm x 14 mm, lead (Pb)-free FBGA package. With minimal die shrinks, the single-die device provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications, eliminating the need for costly redesigns and part requalification. This 8 GB DDR3L is a logical choice for applications that require increased memory yet face board space constraints.

Features and Benefits
  • Offered in the 96-ball, 9 mm x 14 mm, lead (Pb)-free FBGA package
  • State-of-the art silicon provided by Micron Technology
  • Extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz
  • Available in commercial extended (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges
  • Internally configured as eight banks of 64 M x 16-bits (parameter 512 M x 16)
  • Operates from a single +1.35 V power supply 
  • Fully synchronous operation
  • Programmable read or write burst lengths of 4 or 8
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Programmable mode register allows the system to choose the most suitable modes to maximize performance
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