Alliance Memory's AS4C8M16S-7BCN and AS4C16M16S-7BCN high-speed CMOS synchronous DRAMs (SDRAM) feature densities of 128 MB and 256 MB, respectively, in a 54-ball 8 mm x 8 mm x 1.2 mm TFBGA package. The devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions.
Features
- Fast access time from clock down to 4.5 ns at a 5 ns clock
- Fast clock rates of 143 MHz
- Internally configured as four banks of 2 M word x 16-bits (AS4C8M16S-7BCN) and 4 M word x 16-bits (AS4C16M16S-7BCN) with a synchronous interface
- Programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option
- Easy-to-use refresh functions include auto- or self-refresh
- Programmable mode register allows the system to choose the most suitable modes to maximize performance
- Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
- Single +3.3 V (± 0.3 V) power supply
- Lead (Pb)- and halogen-free
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| Applications |
- Medical, industrial, automotive, and telecom applications requiring high memory bandwidth
- High-performance PC applications
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