Alliance Memory's AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, AS4C32M16D1 and AS4C64M16D1 high-speed CMOS double data rate synchronous DRAMs (DDR1 SDRAM) feature densities of 64 MB, 128 MB, 256 MB, 512 MB, and 1Gb respectively, in the 66-pin TSOP II package. Ideal for a range of products requiring high memory bandwidth, and particularly suited to high-performance PC applications, the devices provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions.

Features

• Internally configured as four banks of 1M (AS4C4M16D1), 2M (AS4C8M16D1), 4M (AS4C16M16D1), 8M (AS4C32M16D1) or 16M (AS4C64M16D1) x 16 bits with a synchronous interface
• Programmable read or write burst lengths of 2, 4, or 8
• Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
• Easy-to-use refresh functions include auto- or self-refresh
• Programmable mode register allows the system to choose the most suitable modes to maximize performance
• Fast clock rates of 200 MHz and 166 MHz
• 400 Mbps/pin data rate
• Operate from a single +2.5 V (±0.2 V) power supply
• Lead (Pb) and halogen-free