High-Speed CMOS DDR2 SDRAMs

By Alliance Memory, Inc. 55

High-Speed CMOS DDR2 SDRAMs

Alliance Memory's AS4C16M16D2, AS4C32M16D2, AS4C64M8D2, AS4C64M16D2, AS4C128M8D2, and AS4C128M16D2 high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) feature densities of 256 MB, 512 MB, 1 GB, and 2 GB in 60-ball 8 mm x 10 mm x 1.2 mm and 84-ball 8 mm x 12.5 mm x 1.2 mm FBGA packages. Ideal for a range of products requiring high memory bandwidth, the devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions.

Features and Benefits
  • Offered in three temperature ranges:
    • Commercial (0°C to +85°C)
    • Industrial (-40°C to +95°C)
    • Automotive (-40°C to +105°C)
  • Features a synchronous interface
  • Programmable read or write burst lengths of 4 or 8
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Operate from a single +1.8 V (±0.1 V) power supply
  • Lead (Pb)- and halogen-free
  • Internally configured as four banks of 8 M words x 16-bits (AS4C32M16D2), eight banks of 8 M x 16-bits (AS4C64M16D2), 16 M x 8-bits (AS4C128M8D2), and 16 M x 16-bits (AS4C128M16D2)
  • Easy-to-use refresh functions include auto- or self-refresh
  • Programmable mode register allows the system to choose the most suitable modes to maximize performance
  • Fast clock rate of 400 MHz
  • Data rate of 800 Mbps / pin
Applications
  • Automotive, industrial, consumer, and networking products

 

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