High-Voltage Power MOSFET and IGBT Drivers

By ON Semiconductor 89

High-Voltage Power MOSFET and IGBT Drivers

High-voltage power gate drivers from ON Semiconductor target low- to mid-power applications and can be used in end products like white goods, lighting ballasts, and industrial applications, such as motor control.

These high-voltage, high-side, and low-side drivers are specified over a wide temperature range (-40°C <TJ <125 °C) and can operate with an input voltage up to 600 V, easing time and effort of design. All the devices feature a dv/dt immunity of 50 V/ns and are 3.3 V and 5 V input logic compatible. These devices use the bootstrap technique to ensure a proper drive of the high-side power switch and provide rugged design.

The NCP5109, NCP5106B, NCP5181, and NCP5304 are high-voltage power gate drivers that provide two outputs for direct drive of two N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. The NCP5106A can be used in any other high-side plus low-side configuration.

Features
  • High-voltage range: up to 600 V
  • dv/dt immunity 50 V/nsec
  • Gate drive supply range from 10 V to 20 V
  • High and low DRV outputs
  • 3.3 V and 5 V input logic compatible
  • Up to VCC swing on input pins
  • Matched propagation delays between both channels
  • Outputs in phase with the inputs
  • Independent logic inputs to accommodate all topologies
  • Under voltage lock out (UVLO) for both channels
Applications
  • Bridge inverter for UPS systems
  • High power energy management
  • Half-bridge power converters
  • Full-bridge converters
  • Any complementary drive converters (asymmetrical half-bridge, active clamp)

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