Diodes' D5V0F3B6LP20 device configuration provides four channels of ESD protection and two bidirectional high-speed data lines, one bidirectional for the USBID port and one unidirectional for the VBUS port. The high-speed data line protection operates up to 5.5 V and the VBUS pin tolerates up to 26 V of charging voltage. The ultra-low channel leakage specification of 50 nA allows for ultra-low battery drain in mobile devices. The high-speed data line channel capacitance of 0.4 pF allows up to 6 GHz of data transmission without affecting signal integrity. The D5V0F3B6LP20 comes in small-footprint, low-profile, industry-standard DFN2020 package.
Features |
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- Exceeds IEC 61000-4-2 ESD Level 4 contact and air discharge standards
- VBUS port provides up to ±30 kV of ESD protection
- I/O port provides ESD protection up to ±8 kV and ±15 kV for contact and air, respectively
- One channel each for high surge VBUS protection and USBID
- The VBUS channel is capable of tolerating surge current up to 9.5 A (10 μs x 1000 μs). The USBID port will help to identify and protect the accessory
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- Two high-speed data lines with ultra-low I/O capacitance and ultra-low leakage current
- The ultra-low channel capacitance of 0.4 pF allows high-speed signal transmission of up to 6 GHz without interference. Additionally, ultra-low leakage current of 50 nA extends battery life for mobile devices
- Low-profile, small form-factor package
- The small U-DFN2020-6 package (2 mm x 2 mm x 0.6 mm typical) enables compact schemes of the adopting products
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Applications |
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- Cellular handsets
- Portable electronics
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- Computers and peripheral
- USB 2.0, USB 3.0
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