D5V0F3B6LP20 TVS Aimed to Protect USB OTG

By Diodes Incorporated 39

D5V0F3B6LP20 TVS Aimed to Protect USB OTG

Diodes' D5V0F3B6LP20 device configuration provides four channels of ESD protection and two bidirectional high-speed data lines, one bidirectional for the USBID port and one unidirectional for the VBUS port. The high-speed data line protection operates up to 5.5 V and the VBUS pin tolerates up to 26 V of charging voltage. The ultra-low channel leakage specification of 50 nA allows for ultra-low battery drain in mobile devices. The high-speed data line channel capacitance of 0.4 pF allows up to 6 GHz of data transmission without affecting signal integrity. The D5V0F3B6LP20 comes in small-footprint, low-profile, industry-standard DFN2020 package.

Features
  • Exceeds IEC 61000-4-2 ESD Level 4 contact and air discharge standards
    • VBUS port provides up to ±30 kV of ESD protection
    • I/O port provides ESD protection up to ±8 kV and ±15 kV for contact and air, respectively
  • One channel each for high surge VBUS protection and USBID
    • The VBUS channel is capable of tolerating surge current up to 9.5 A (10 μs x 1000 μs). The USBID port will help to identify and protect the accessory
  • Two high-speed data lines with ultra-low I/O capacitance and ultra-low leakage current
    • The ultra-low channel capacitance of 0.4 pF allows high-speed signal transmission of up to 6 GHz without interference. Additionally, ultra-low leakage current of 50 nA extends battery life for mobile devices
  • Low-profile, small form-factor package 
    • The small U-DFN2020-6 package (2 mm x 2 mm x 0.6 mm typical) enables compact schemes of the adopting products
Applications
  • Cellular handsets
  • Portable electronics
  • Computers and peripheral
  • USB 2.0, USB 3.0

New Products:

D5V0F3B6LP20-7

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