Vishay Siliconix’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10x lower Qrr and increased reliability than standard MOSFETs, while offering 650 V options to offer additional voltage headroom. This completes the superjunction family for 600 V and 650 V with both E series and EF series options available and expands the Vishay Siliconix offering to devices that can be used in ZVS / soft switching topologies such as phase-shifted bridges and LLC converter half bridges. The devices’ low Qrr allows them to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress. Their ultra-low on-resistance and gate charge translate into extremely low conduction and switching losses to save energy in high-power, high performance switch mode applications.