HMC1131, GaAs, pHEMT, MMIC, Medium Power Amplifier

HMC1131, GaAs, pHEMT, MMIC, Medium Power Amplifier

The HMC1131 from Analog Devices is a gallium arsenide (GaAs), pseudomorphic high-electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC) driver amplifier that operates from 24 GHz to 35 GHz. The HMC1131 provides 22 dB of gain at the 24 GHz to 27 GHz range, 35 dBm output IP3, and 24 dBm of output power at 1 dB gain compression, while requiring 225 mA from a 5 V supply. The HMC1131 is capable of supplying 25 dBm of saturated output power and is housed in a compact, 4 mm × 4 mm, ceramic leadless chip carrier (24-lead LCC) package. The HMC1131 is an ideal driver amplifier for a wide range of applications, including point-to-point radios, from 24 GHz to 35 GHz.

The HMC1131 amplifier provides 22 dB of gain, 35 dBm output IP3, and 24 dBm of output power at 1 dB gain compression. The amplifier reduces the number of components required to achieve the desired output power and small signal gain, which lowers development costs and design time by enabling simpler transmit line-ups and higher integration. Based on a GaAs (gallium-arsenide), pHEMT (pseudomorphic high-electron mobility transistor) design, the HMC1131 is ideal for civil and defense communications systems, including point-to-point and point-to-multi-point radios and VSAT and SATCOM applications. The HMC1131 is capable of supplying 25 dBm of saturated output power with 16 percent PAE, and is housed in a compact, leadless, 4 mm x 4 mm, ceramic, surface-mount package.

Analog Devices RF amplifiers are designed utilizing the company’s leading amplifier and RF IC expertise. Their extensive family of single-ended, input/output, fixed-gain amplifiers can be used from DC to microwave and include gain blocks, low noise amplifiers, intermediate frequency amplifiers, driver amplifiers, and differential amplifiers. These devices offer high linearity, low noise figures, and various fixed-gain options, as well as low power consumption; they are all fully specified over frequency, temperature, and supply voltage for use in a variety of applications.

Features
  • High output third-order intercept (IP3): 35 dBm
  • High gain: 22 dB (24 GHz to 27 GHz)
  • High output power for 1 dB compression (P1dB): 24 dBm
  • DC supply: 5 V at 225 mA
  • Compact, 24-lead, 4 mm × 4 mm LCC package
  • High saturated output power (PSAT): 25 dBm
Applications
  • Point-to-point radios
  • Point-to-multipoint radios

  • VSAT and SATCOM
Manufacturer