SCT2H12NZ Gate Driver Circuit

SCT2H12NZ Gate Driver Circuit

The SCT2H12NZ provides the high breakdown voltage required for auxiliary power supplies in industrial equipment. Conduction loss is reduced by 8x over conventional silicon MOSFETs, contributing to greater energy efficiency. And combining with ROHM's AC/DC converter control IC designed specifically for SiC MOSFET drive (BD7682FJ-LB) will make it possible to maximize performance and improve efficiency by up to 6%. This allows smaller peripheral components to be used, leading to increased miniaturization.

Optimized for auxiliary power supplies in industrial equipment

Compared to 1500 V silicon MOSFETs used in auxiliary power supplies for industrial equipment, the SCT2H12NZ provides higher breakdown voltage (1700 V) with 8x smaller ON resistance (1.15 Ω). In addition, the compact TO-3PFM package maintains the creepage distance (distance measured along the surface of the insulating material) required by industrial equipment. ROHM is releasing a surface mount type (TO268-2L) that also provides adequate creepage distance.

Improved efficiency when combined with ROHM's dedicated IC

Using this latest SiC MOSFET in combination with ROHM's AC/DC converter control IC (BD7682FJ-LB) designed specifically for SiC MOSFET drive will make it possible to maximize performance and increase efficiency by up to 6%. At the same time heat generation will be reduced, minimizing thermal countermeasures and enabling the use of smaller components.

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