ROHM’s 3^rd generation SiC MOSFETs utilize a proprietary trench gate structure that reduces ON-resistance by 50% and input capacitance by 35% compared with existing planar-type SiC MOSFETs. This translates to significantly lower switching loss and faster switching speeds, improving efficiency while reducing power loss in a variety of equipment.

Key Advantages

• Lower ON-resistance improves inverter power density
• Supports high-speed switching
• Minimal reverse recovery behavior of the parasitic diode
• Small Q_g and parasitic capacitance
• Eliminates degradation caused by parasitic diode conduction
• Compatible with high-temperature operation (T_jmax=175°C)